Abstract
Schottky photodiodes of area have been fabricated and characterized. The photodiodes show less than dark current at and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from /photon at /photon at . The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be .
© 2006 Optical Society of America
Full Article | PDF ArticleMore Like This
G. Lioliou, M.C. Mazzillo, A. Sciuto, and A.M. Barnett
Opt. Express 23(17) 21657-21670 (2015)
John F. Seely, Benjawan Kjornrattanawanich, Glenn E. Holland, and Raj Korde
Opt. Lett. 30(23) 3120-3122 (2005)
Alexander Gottwald, Udo Kroth, Evgenia Kalinina, and Vladimir Zabrodskii
Appl. Opt. 57(28) 8431-8436 (2018)