Abstract
Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal is realized. A thin layer grown on a substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of have been achieved for an average power of at . Results in the femtosecond and picosecond regimes of the laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.
© 2005 Optical Society of America
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