Abstract
Absorption spectroscopy in 3He and 4He has been performed with an InGaAs single-mode distributed Bragg reflection laser diode. The laser source provides as much as 120 mW of single-mode, single-frequency output in the 1083-nm region of the spectrum. Frequency tuning of the laser diode output by means of the junction temperature allows for mode-hop-free scanning of the entire 23S–23P manifold in both the 3He and 4He absorption spectra. The authors believe this to be the first report of semiconductor laser spectroscopy at this wavelength. Such a device will have significant applications in optical pumping, atomic cooling and trapping, fundamental nuclear studies, magnetometry, and gas dynamics.
© 1994 Optical Society of America
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