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III-V on silicon avalanche photodiodes by heteroepitaxy

Abstract

We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k0.2, as InAlAs APDs on InP.

© 2019 Optical Society of America

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