Abstract

Infrared n-p-photodiode photodetectors based on a hybrid assembly of photosensitive elements of format 288×4 with a 56×43-μm step, made from mercury-cadmium telluride heteroepitaxial structures obtained by molecular-beam epitaxy, have been developed, fabricated, and investigated for the 8-12-μm spectral range, along with silicon multiplexers with bidirectional scanning and internal time delay and storage of the signal. The 288×4-format linear photodetector has the following mean values of voltage sensitivity, detectivity, and NETD at the maximum sensitivity: (1-3)×10⁸V/W, (1.5-2.0)×10¹¹cmHz^1/2W⁻¹, and 9mK, respectively. There are no defective channels.

© 2009 Optical Society of America

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