Abstract

This paper discusses optical transitions in a structure with deep quantum wells with a type-I band diagram, containing deep impurities in the barrier region. The tunnel-Hamiltonian formalism is used to obtain expressions for the phototransition rates between the states in the valence band in the quantum well and the levels of the deep impurity centers. It is shown that the photocharging rate of the impurities sharply increases when the light frequency is above a certain threshold.

© 2014 Optical Society of America

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