Abstract
The optical properties of the Au/TiSi<sub>2</sub>(C49)/Si<sub>n-type</sub>/Si system, formed by rapid heat treatment, have been investigated. It is shown that the maximum spectral sensitivity occurs in the 750-nm region. The maximum sensitivity reaches 35mA/W in the 750-800-nm wavelength region. It is concluded that, based on the given structure, which is completely compatible with known technology used for implementing semiconductor devices based on silicon (silicon technology), it is possible to create a photodetector that is sensitive in the 350-1050-nm region.
© 2010 Optical Society of America
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