Abstract

Surface morphology of thick InGaN with higher indium content, grown on GaN/sapphire templates using plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich growth condition, is investigated as a function of growth temperature and III–V ratio using atomic force microscopy. V-shaped pits on the InGaN surface are found to diminish with the decrease in growth temperature and remain unchanged with variation in III–V ratio, while exhibiting a significant impact on surface roughness, crystal quality, and optical properties. Fluctuation in density and depth of V-shaped pits is discussed, taking into account the low growth temperature of PA-MBE.

© 2019 Optical Society of America

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