Abstract
The second-order susceptibilities of both ordered and disordered semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order–disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, and but not can be modulated. Maker-fringe experiments were performed at 1.57 µm to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the coefficient (110 pm/V) only and an upper limit of 60 pm/V for More-sophisticated experimental techniques are proposed for measuring
© 1997 Optical Society of America
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