Abstract
We study the amplification of picosecond pulses in a semiconductor optical amplifier,
including the effect of carrier heating and spectral-hole burning. Under simplifying
approximations we obtain an analytical expression for the amplifier output to a given
picosecond pulse input. The effect of the intraband dynamics becomes important for pulses below
a critical pulse width that is related to the K factor that characterizes the
modulation properties of semiconductor lasers. The critical pulse width ranges from a few
picoseconds to 20 ps in most cases.
© 1997 Optical Society of America
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