Abstract
A rigorous theory of optical rectification in zinc-blende semiconductors is developed. This theory combines the bonding-orbitals representation of the electrons in the semiconductor with the band-structure representation. It is shown that when the semiconductor is excited above the absorption edge there is a strong resonant enhancement of the optical rectification signal and of the terahertz-radiation emission related to it. Both the magnitude and the temporal characteristics of this signal are closely related to the intraband relaxation processes in the valence band.
© 1994 Optical Society of America
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