Abstract
An electromagnetic method based on rigorous diffraction theory of gratings is applied to the analysis of fields in semiconductor laser cavities. The method is based on the Fourier modal method; it is fully rigorous for infinitely periodic resonators and highly accurate for single resonators when absorbing boundary conditions are applied. Fundamental-mode intracavity and near-field distributions are evaluated for some selected geometries, and resonance frequencies are predicted.
© 2006 Optical Society of America
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