Abstract

A model of the quantum efficiency of a planar silicon photodiode that is useful in connection with high-accuracy optical-radiation measurements is developed. The model is based mostly on macroscopic (phenomenological) optical and electronic properties of the device that must be determined from experiments on the device, but the connection with the microscopic physical properties (band structure) of silicon is made. The predictions of this model differ significantly from recent experimental results for the variation of the internal quantum efficiency with angle for a silicon photodiode as reported by Durnin et al. [ J. Opt. Soc. Am. 71, 115 ( 1981)]. A repetition of these measurements is described. The results do not agree with those reported by Durnin et al. but do agree well with the predictions of the quantum-efficiency model.

© 1982 Optical Society of America

Large-flux-ratio linearity measurements on Si photodiodes

W. Budde
Appl. Opt. 21(20) 3699-3701 (1982)

Radiative flux measurements in the troposphere

Francisco P. J. Valero, Warren J. Y. Gore, and Lawrence P. M. Giver
Appl. Opt. 21(5) 831-838 (1982)

New model for the internal quantum efficiency of photodiodes based on photocurrent analysis

Alejandro Ferrero, Joaquin Campos, Alicia Pons, and Antonio Corrons
Appl. Opt. 44(2) 208-216 (2005)

Diffusers in silicon-photodiode radiometers

L. P. Boivin
Appl. Opt. 21(5) 918-923 (1982)

Elimination of interface recombination in oxide passivated silicon p⁺n photodiodes by storage of negative charge on the oxide surface

J. Geist, A. J. D. Farmer, P. J. Martin, F. J. Wilkinson, and S. J. Collocott
Appl. Opt. 21(6) 1130-1135 (1982)