Abstract
We report the submillimeter-laser-magnetptransmission of pure n-type InSb in a metal-insulator-semiconductor arrangement as a function of the applied gate voltage. From the recorded data we derive a strong dependence of the surface cylotron mass in accumulation layers on InSb on the electric field and hence on the surface density of electrons.
© 1977 Optical Society of America
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G. Landwehr
J. Opt. Soc. Am. 67(7) 922-928 (1977)
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