Abstract
RF sputtered AlxNy thin film is deposited on the cavity
surface of LD (laser diode) by N2 plasma
pretreatment. Firstly optimize the preparation process of AlxNy
film, and test the chemical ratio, reflectivity and optical absorption of the optimized
AlxNy film by EDX, spectrophotometer and surface thermal lens
technology respectively, which verify the feasibility of AlxNy
used for facet coating film in LD process; then optimize the N2 plasma
cleaning process, and use PL to find out that sputtered AlxNy
passivation film by N2 plasma pretreatment can increase the GaAs surface
photoluminescence efficiency by 119%. Finally, a 10 nm thick AlxNy
passivation film is coated on cavity surface of LD with optimized N2 plasma
pretreatment, which leads to a higher reliability than the traditional LD.
© 2013 IEEE
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