Abstract
We introduce a surface-tension driven heterogeneous integration
of thin film photonic devices using a surface wetting modification. In this
process, the combination of a micro-contact printing method and plasma surface
modification is used to selectively form a binding liquid on an integration
host substrate. With predefined integration areas using the binding liquid,
thin film GaAs photodetectors (PDs) are successfully integrated. We have demonstrated
the implementation of this integration method by presenting a multi-material
photonic integrated structure with integrated GaAs based thin film PDs and
a polymer waveguide on a silicon substrate. The measured average misalignment
of the integrated PDs was 2.8 $\mu$m from the predefined integration locations. Stable electrical contact
between the PDs and the host substrate has been confirmed with dark and photocurrent
measurements. The proposed process has the potential towards a low-cost, parallel
heterogeneous integration of III-V photonic devices on a silicon platform.
© 2011 IEEE
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