Abstract
In this paper, a new approach for the near infrared sub-bandgap detection in
Si-based devices is investigated. In particular, the design, the realization and the
characterization of a back illuminated silicon resonant cavity enhanced Schottky
photodetectors, working at 1.55 μm, are reported.The photodetectors are constituted
by Fabry–Perot microcavity incorporating a Schottky diode. The working principle is
based on the internal photoemission effect enhanced by cavity effect. Performances
devices in terms of responsivity, free spectral range, finesse and estimated bandwidth
are reported.
© 2010 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription