Abstract
A fully analytic analysis of the frequency response of a homo-structure
p-i-n photodiode is developed to characterize high-speed large-area p-i-n
photodiodes. Therefore, the model can easily be implemented in mathematical
simulation tools for system analysis. The model accurately describes drift-,
diffusion- and parasitic effects and has been experimentally verified up to
3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond
the 3 dB cutoff frequency (up to ${-}$35 dB).
© 2010 IEEE
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