Abstract
InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable
temperature characteristics have been achieved by extending the resonant cavity length
from one optical wavelength (1λ) to three optical wavelengths (3λ) and tripling
the number of quantum wells. When the operation temperature increases from 25
°C to 95 °C, the degree of power variation at 20 mA is reduced from
-2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and
3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent
experimental results, advanced device simulation is applied to model the RCLEDs with
different cavity designs. According to the numerical simulation results, we deduce that
the stable temperature-dependent output performance should originate from the reduction
of electron leakage current and thermally enhanced hole transport for the 3-λ
cavity AlGaInP RCLEDs.
© 2008 IEEE
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