Abstract
We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD
photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for
fiber-optic communications in the 990 and 1300 nm ranges, respectively. The
active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD
layers, with each of the SML QD layer formed by alternating depositions of
InAs $({< 1}~{\hbox {ML}})$ and
GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs–InGaAs
QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics
throughout the current range, with side-mode suppression ratio (SMSR) larger
than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs
SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates
that the laser beam is well confined by the photonic-crystal structure of
the device.
© 2008 IEEE
PDF Article
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