Abstract
We have performed a numerical study involving the design and optimization
of InP-based microdisk lasers integrated on and coupled to a nanophotonic
silicon-on-insulator (SOI) waveguide circuit, fabricated through bonding technology.
The theoretical model was tested by fitting it to the lasing characteristics
obtained for fabricated devices, which we presented previously. A good fit
was obtained using parameter values that are consistent with numerical simulation.
To obtain optimized laser performance, the composition of the InP-based epitaxial
layer structure was optimized to minimize internal optical loss for a structure
compatible with efficient current injection. Specific attention was paid to
a tunnel-junction based approach. Bending loss was quantified to estimate
the minimum microdisk diameter. The coupling between the InP microdisk and
Si waveguide was calculated as function of the bonding layer thickness, waveguide
offset and waveguide width. To study the lateral injection efficiency, an
equivalent electrical network was solved and the voltage-current characteristic
was calculated. Based on these results, the dominant device parameters were
identified, including microdisk thickness and radius, coupling loss and tunnel-junction
p-type doping. These parameters were optimized to obtain maximum wall-plug
efficiency, for output powers in the range 1–100 µW. The results of this optimization illustrate the
potential for substantial improvement in laser performance.
© 2007 IEEE
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