Abstract
We investigate the modal characteristics of a 1300-nm InP-based photonic-crystal (PC) vertical-cavity
surface-emitting diode laser. To this aim, we apply the plane-wave admittance method and analyze a broad range of PC
parameters such as hole etching depth, distance between the holes, and their diameters. We determine a range of
technologically feasible PC parameters providing an optimal laser performance.
© 2007 IEEE
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