Abstract
We demonstrate a monolithically integrated laser–waveguide device implemented with InGaAs/GaAs quantum
dot heterostructures grown on silicon by molecular beam epitaxy. Focused-ion-beam (FIB) etching is utilized to form
high-quality laser mirrors for feedback and grooves for coupling and electrical isolation. Based on a transmission
matrix and a generalized beam propagation approach in terms of intensity moments and Gouy phase shifts, a
self-consistent model is developed to estimate the reflectivity and coupling coefficient at etched grooves and
optimize these parameters for real devices. High-quality FIB-etched facets with a reflectivity of R ~ 0.28 and efficient coupling with coupling coefficients of up to 30% for well-defined grooves have been achieved.
© 2007 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription