Abstract
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator
(Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n
photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of
-7.4 dBm (BER=10<sup>-12</sup>) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s
operation is demonstrated at 85 °C. Error-free (BER<10<sup>-12</sup>) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply
voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are
shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the
future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.
© 2007 IEEE
PDF Article
More Like This
Co-design of a differential transimpedance amplifier and balanced photodetector for a sub-pJ/bit silicon photonics receiver
Ke Li, Shenghao Liu, Xiaoke Ruan, Dave J. Thomson, Yang Hong, Fan Yang, Lei Zhang, Cosimo Lacava, Fanfan Meng, Weiwei Zhang, Periklis Petropoulos, Fan Zhang, and Graham T. Reed
Opt. Express 28(9) 14038-14054 (2020)
Silicon photonic receiver and transmitter operating up to 36 Gb/s for λ~1550 nm
Jiho Joo, Ki-Seok Jang, Sang Hoon Kim, In Gyoo Kim, Jin Hyuk Oh, Sun Ae Kim, Gyu-Seob Jeong, Yoonsoo Kim, Jun-Eun Park, Sungwoo Kim, Hankyu Chi, Deog-Kyoon Jeong, and Gyungock Kim
Opt. Express 23(9) 12232-12243 (2015)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription