Abstract
High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated
lasers (EMLs) based on an identical epitaxial layer (IEL) integration scheme
are developed for 40-Gb/s optical fiber communication systems. A self-aligned
planarization technique has been adopted to reduce the capacitance of the
electroabsorption modulator (EAM). The IEL structure EML chips exhibit a small
signal modulation bandwidth around 40 GHz. The influence of residual reflection
at the modulator facet on the small signal modulation response is investigated.
Submount containing a grounded coplanar waveguide (GCPW) transmission line
is used for packaging the EML chips into transmitter modules. The optimization
of the GCPW structure to suppress resonances in frequency response due to
parallel-plate modes is presented. Clear eye opening under 40-Gb/s nonreturn-to-zero
(NRZ) modulation has been demonstrated for the packaged EML module.
© 2008 IEEE
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