Abstract
Surface roughening is frequently employed to increase light extraction from
light-emitting diodes (LEDs), especially in the important case of III-Nitride LEDs. We
explore the physics governing this scheme. We introduce a numerical model, based on
solving Maxwell's equations, to accurately describe scattering by a roughened
semiconductor interface. This model reveals the complex angular dependence of the
scattering properties. We then couple this approach to an LED light extraction model and
predict how surface roughness impacts light extraction. We focus on two important cases,
thin-film LEDs and volumetric LEDs. We show that optical losses in the LED dictate light
extraction, and that volumetric LEDs offer an opportunity for ultimate
efficiency.
© 2013 IEEE
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