Abstract
A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H)
thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is
proposed. The threshold voltage shift
$(\Delta V_{T})$
of the drive TFT caused by electrical stress is compensated by an incremental
gate-to-source voltage
$(\Delta V_{GS})$
generated by utilizing the
$\Delta V_{T}$
-dependent charge transfer from the drive TFT to a TFT-based
metal–insulator–semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive
charge to the gate of the drive TFT to improve the OLED drive current. The non-ideality of the
$\Delta V_T$
-compensation, TFT overlap capacitance, programming speed, and OLED degradation
are discussed. The effectiveness of the proposed pixel circuit is verified by simulation
results.
© 2013 IEEE
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