Abstract
This paper reviews our recent progress of GaN-based high brightness
light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned
sapphire substrates in GaN-based LEDs, not only could increase the extraction
quantum efficiency, but also improve the internal quantum efficiency. Secondly,
we present a high light-extraction 465-nm GaN-based vertical light-emitting
diode structure with double diffuse surfaces. The external quantum efficiency
was demonstrated to be about 40%. The high performance LED was achieved mainly
due to the strong guided-light scattering efficiency while employing double
diffuse surfaces.
© 2007 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription