Abstract
We propose a field-emission device surrounded by high-k dielectric (FESH) that used a Spindt-type emitter;
its design guidelines are demonstrated using various device parameters. The
most significant aspect of the FESH structure is its use of high-k dielectric material to surround
the emitter. The large dielectric constant of the high-k dielectric dramatically reduces the threshold voltage
when applying dc voltage. It is shown that the most suitable device parameters
can be extracted from the viewpoint of figure-of-merit. When dc voltage is
applied to a FESH device, a large transient current flows between the anode
and the cathode. The application of an ac voltage eliminates the current leakage
that would otherwise hinder the development of practical applications such
as displays. It is demonstrated from dynamic simulations that sinusoidal input
pulses should be applied to FESH devices rather than rectangular input pulses
since the former realizes the benefits of low-power operation and high reliability.
© 2006 IEEE
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