Abstract
In this paper, we for the first time demonstrate the analog
performance of a block-oxide structure in polycrystalline silicon
thin-film transistor with source/drain-tie and additional poly-Si
body (BO-SDT-APSB TFT) experimentally and compared with the similar
device with zero block-oxide structure (SDT-APSB TFT). The block-oxide
in BOSDT-SDT-APSB TFT is fabricated to reduce the drain-induced barrier
lowering and channel-length modulation. The source-drain tie and additional
poly-silicon body region are fabricated in both devices to improve
the device performance and reduce the self-heating effect. Experimental
results show that the block-oxide structure can offer enhanced gate
controllability over the channel, and the transconductance (
$g _{\rm m}$
)
of the BO-SDT-APSB TFT is therefore improved. In addition, although
a higher drain conductance (
$g _{\rm d}$
), implying a lower output
resistance
$r _{\rm
o}$
, is observed for a BO-SDT-APSB TFT, the enhanced
gm still helps to achieve the desired intrinsic voltage gain (
$A _{\rm v} = g _{\rm m}
/ g _{\rm d}$
) behavior.
© 2014 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription