Abstract
In this paper, the properties of GaN-based light-emitting diodes
(LEDs) with lattice-matched InGaN/AlInN/InGaN (LM-IAI) quantum-well
(QW) barriers are investigated numerically. Distributions of electrostatic
field, carrier current density, carrier concentration and radiative
recombination rate are simulated, and internal quantum efficiency
(IQE) and emission power are calculated. The results show that the
LEDs with LM-IAI barriers have higher IQE and emission power over
their conventional counterparts with GaN barriers due to the mitigation
of the quantum-confined Stark effect and the suppression of electron
leakage. Furthermore, the performances of the nitride-based LEDs with
the proposed barriers can be further improved by dismissing the electron-blocking
layer, which is attributed to the improvement of hole injection efficiency
and the decrease of overall Auger recombination.
© 2015 IEEE
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