Abstract
The triple-targets magnetron co-sputtering system with three targets
of In
$_{2}$
O
$_{3}$
, Ga
$_{2}$
O
$_{3}$
, and Zn was used to deposit amorphous
indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were
used as the channel layers of the transparent thin film transistors (TFTs).
The In
$_{2}$
O
$_{3}$
RF power of
50 W, Ga
$_{2}$
O
$_{3}$
RF power of
25 W and Zn DC power of 10
$~$
W were independently tuned to obtain the optimal composition
$({In:Ga:Zn} = 3.5{:}1{:}2.7)$
of the a-IGZO films. The effective field-effect mobility, on-to-off
current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3
cm
$^{2}$
/V
$\cdot$
s, 6.5
$\,\times\,$
10
$^{6}$
, and 0.23 V/decade, respectively. Using the SiO
$_{\rm x}$
passivation and thermal-annealing
treatment, the effective field-effect mobility, on-to-off current ratio, and
subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5
cm
$^{2}$
/V
$\cdot$
s, 7.0
$\times$
10
$^{6}$
, and 0.22 V/decade, respectively. In addition, stable performances
were also noted.
© 2014 IEEE
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