Abstract
We report channel length
$L$
(
$L$
ranging
from 2 to 40
$ \mu{{m}}$
) dependence of the electrical stability of amorphous indium-gallium-zinc-oxide
(a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs employ a coplanar structure
with a
${{SiN}}_{x}$
interlayer used to dope the source/drain regions. After application
of positive gate bias stress (PBS), short-channel devices (
$L = 2~ \mu {{m}}$
) exhibit smaller
threshold voltage shifts (
$\Delta
{\rm V} _{\rm th}$
) compared to longer-channel devices (
$L \ge {4}~ \mu{{m}}$
). It is proposed that carrier diffusion takes place from the high
carrier concentration regions under the
${{SiN}}_{x}$
interlayer to the intrinsic
channel region, thereby shifting the Fermi level closer to the conduction
band. Higher Fermi levels mean less defect states available for carrier trapping
– hence the small
$\Delta
{\rm V} _{\rm th}$
in short devices under PBS.
© 2013 IEEE
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