Abstract
In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect
ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint
lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale
patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light
output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power
of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a
unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that
the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also
a promising development to a NPSS.
© 2013 IEEE
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