Abstract
We demonstrate a high-speed silicon carrier-depletion Michelson
interferometric (MI) modulator with a low on-chip insertion loss of 3 dB. The
modulator features a compact size of <1 mm2 and a static high
extinction ratio of >30 dB. The Vπ·Lπ of the MI
modulator is 0.95–1.26 V·cm under a reverse bias of −1 to −8 V, indicating a
high modulation efficiency. Experimental results show that a 4-level pulse
amplitude modulation up to 20 Gbaud is achieved with a bit error rate of
6×10−3, and a 30 Gb/s binary phase-shift-keying modulation is
realized with an error vector magnitude of 25.8%.
© 2017 Chinese Laser Press
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