Abstract
Electron leakage still needs to be solved for InGaN-based blue-violet laser
diodes (LDs), despite the presence of the electron blocking layer (EBL). To reduce
further electron leakage, a new structure of InGaN-based LDs with an InGaN interlayer
between the EBL and p-type waveguide layer is designed. The optical and electrical
characteristics of these LDs are simulated, and it is found that the adjusted energy
band profile in the new structure can improve carrier injection and enhance the
effective energy barrier against electron leakage when the In composition of the InGaN
interlayer is properly chosen. As a result, the device performances of the LDs are
improved.
© 2016 Chinese Laser Press
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