Abstract
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI)
galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear
photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power
and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface
electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the
photocurrent and dark current.
© 2013 Chinese Optics Letters
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