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Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector: errata

Geunsik Lim, Tariq Manzur, and Aravinda Kar

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Abstract

Data reported in Table 1 of our earlier paper [Appl. Opt. 50, 2640 (2011) [CrossRef]  ] are corrected.

© 2013 Optical Society of America

The data in Table 1 on page 2643 of [1] are corrected as indicated in bold in Table 1 here.

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Table 1. Optical Properties of the As-Received and Doped 4H-SiC Substrates

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Reference

1. G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011). [CrossRef]  

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Tables (1)

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Table 1. Optical Properties of the As-Received and Doped 4H-SiC Substrates

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