Abstract

This paper presents the test results for high-performance and high-uniformity waveguide silicon-based germanium (Ge) photodetectors (PDs) for the ${\rm O}$ band and ${\rm C}$ band. Both wafer-scale and chip-scale test results are provided. The fabricated lateral ${p} - {i} - { n}$ (LPIN) PDs exhibit a responsivity of 0.97 A/W at a bias of ${-}{2}\;{\rm V}$, a bandwidth of 60 GHz, and a no-return-to-zero (NRZ) eye diagram rate of 53.125 Gb/s. Additionally, an average dark current of 22.4 nA was obtained in the vertical ${p} - {i} - { n}$ (VPIN) PDs at ${-}{2}\;{\rm V}$ by optimizing the doping process. The device can reach an average responsivity of 0.9 A/W in the ${\rm O}$ band. The standard deviation in a wafer with a dark current and responsivity is as low as 7.77 nA and 0.03 A/W at ${-}{2}\;{\rm V}$, respectively.

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