Blue-light-enhanced avalanche photodiode with a&#x00A0;multi-finger grating structure for fluorescence detection

Zhixiang Cao; Zhixiang Cao; Jian Yang; Jian Yang; Yang Wang; Ruiqian Mao; Ruiqian Mao; Rongqing Yi; Rongqing Yi; XiangLiang Jin; XiangLiang Jin

doi:10.1364/AO.506427

Applied Optics
Vol. 63,
Issue 2,
pp. 450-458
(2024)
•https://doi.org/10.1364/AO.506427

Blue-light-enhanced avalanche photodiode with a multi-finger grating structure for fluorescence detection

Zhixiang Cao, Jian Yang, Yang Wang, Ruiqian Mao, Rongqing Yi, and XiangLiang Jin

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Zhixiang Cao, Jian Yang, Yang Wang, Ruiqian Mao, Rongqing Yi, and XiangLiang Jin, "Blue-light-enhanced avalanche photodiode with a multi-finger grating structure for fluorescence detection," Appl. Opt. 63, 450-458 (2024)

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Abstract

The responsiveness of the photodetectors is critical to the accuracy of the fluorescent fiber optical temperature sensor. However, the current gain and signal-to-noise ratio (SNR) of traditional photodiodes (PDs) is low, which makes it difficult to meet the high-precision detection requirements of the system. In response to the above problems, this paper achieves a novel, to the best of our knowledge, multi-finger grating (MFG) avalanche photodiode (APD). The device combines the polysilicon gate and the space charge region formed by P$+$/N-Well to detect photon signals. The conversion capability of the photodetector can be significantly enhanced by the MFG structure. The principle of the device is simulated and verified by technology-computer-aided design (TCAD). The standard grating APD (SG-APD), 2-finger grating APD (2FG-APD), 3-finger grating APD (3FG-APD), and 4-finger grating APD (4FG-APD) are fabricated based on 0.18 µm CMOS process. The optoelectronic detection characteristics of these devices are analyzed by establishing an optoelectronic test platform. At 480 nm, the responsivity of 2FG-APD, 3FG-APD, and 4FG-APD increases by 79.3%, 96.9%, and 70.2%, respectively, compared to SG-APD (4.021 A/W). The test results indicate that 3FG-APD exhibits a strong photon response in the blue light range. The device has broad application prospects in the field of fluorescence detection.

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Device	Single Gate Spacing (µm)	Finger Spacing (µm)
SG-APD	6	0
2FG-APD	1.2	3.6

Device	Technology	Structure	$V_{b}$	Responsivity
Ref. [11]	0.25 µm CMOS	p $+$ /n-well	12.1 V	0.200 A/W at 850 nm
Ref. [12]	0.13 µm CMOS	n $+$ /p-well	11 V	0.550 A/W at 590 nm
Ref. [13]	0.18 µm CMOS	p $+$ /n-well	68 V	13.17 A/W at 830 nm
Ref. [14]	0.18 µm CMOS	n-well/p-well	69 V	33.00 A/W at 850 nm
This work	0.18 µm CMOS	p $+$ /n-well	10.1 V	6.300 A/W at 480 nm

Device	Single Gate Spacing (µm)	Finger Spacing (µm)
2FG-APD	1.2	3.6
3FG-APD	1.2	1.2
4FG-APD	1.2	0.4

Device	Technology	Structure	Gain	$V_{b}$	Responsivity
SG-APD	0.18 µm CMOS	p $+$ /n-well	50.8 dB at 10 V	10.1 V	4.021 A/W at 480 nm
2FG-APD	0.18 µm CMOS	p $+$ /n-well	56.2 dB at 10 V	10.1 V	6.300 A/W at 480 nm
3FG-APD	0.18 µm CMOS	p $+$ /n-well	60.7 dB at 10 V	10.1 V	6.917 A/W at 480 nm
4FG-APD	0.18 µm CMOS	p $+$ /n-well	57.0 dB at 10 V	10.1 V	5.979 A/W at 480 nm

Device	Single Gate Spacing (µm)	Finger Spacing (µm)
SG-APD	6	0
2FG-APD	1.2	3.6

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Applied Optics