Abstract
We show that the concentration of oxygen interstitials trapped in films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in films, in significantly high concentrations, i.e., . These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.
© 2014 Optical Society of America
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