Abstract
We report on the waveguide formation in the laser crystal by oxygen or silicon ion implantation, respectively, and how the waveguide structure effectively supports the fundamental mode in the visible and near-infrared telecommunication band. Compared with Si-ion, the waveguide produced by O-ion has a larger effective refractive index of fundamental mode and lower propagation loss, which shows that peak position of implanted ion nuclear energy loss has a significant impact on waveguide features. The investigation of the photoluminescence and Raman spectra demonstrates that the luminescence feature and crystal structure of the waveguide active region do not change significantly and gain good preservation after ion implantation.
©2012 Optical Society of America
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