Abstract
We systematically study ultraviolet laser-induced ultrafast photovoltaic effect in miscut single crystal wafers with different thicknesses at ambient temperature without any applied bias. An open- circuit photovoltage (PV) is obtained when the wafer is irradiated by a laser pulse of duration. With the decrease of crystal thickness, the peak PV increased to a maximum of at and then decreased to at . Meanwhile, the 10%–90% rise time of photovoltaic responses declines gradually. The inner mechanism of the present thickness-dependent photovoltaic response is discussed.
© 2010 Optical Society of America
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