Shai N. Shafrir, John C. Lambropoulos, and Stephen D. Jacobs, "Subsurface damage and microstructure development in precision microground hard ceramics using magnetorheological finishing spots," Appl. Opt. 46, 5500-5515 (2007)
We demonstrate the use of spots taken with magnetorheological finishing (MRF)
for estimating subsurface damage (SSD) depth from deterministic microgrinding for three hard ceramics: aluminum oxynitride (∕ALON), polycrystalline alumina (∕PCA), and chemical vapor deposited (CVD) silicon carbide
. Using various microscopy techniques to characterize the surfaces, we find that the evolution of surface microroughness with the amount of material removed shows two stages. In the first, the damaged layer and SSD induced by microgrinding are removed, and the surface microroughness reaches a low value. Peak-to-valley (p-v) surface microroughness induced from grinding gives a measure of the SSD depth in the first stage. With the removal of additional material, a second stage develops, wherein the interaction of MRF and the material's microstructure is revealed. We study the development of this texture for these hard ceramics with the use of power spectral density to characterize surface features.
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Catalog values, unless otherwise specified.
Calculated using the Evans correlation [23].
Density may vary slight depending on the stoichiometry.
Averaging 10 Vickers indentations at 1 kgf.
Using Archimedes' water immersion principles [24].
Calculated from measurements using ultrasonic tests and density values. Data were averaged for two PCA discs (∼30 mm diameter × ∼1 mm thick) polished on both sides.
Averaging five Vickers indentations at 1 kgf.
The following parameters remained constant: Wheel speed, Ωt = 6800 rpm for contour tool grinding, and Ωt = 3000 rpm for ring tool grinding, work spindle speed, Ωw = 100 rpm in both cases.
Bronze bonded, 75 diamond concentration.
Resin bonded, 75 diamond concentration.
Table 3
Selected Summary of Results for Grinding and Spotting Experiments
(a)—ALON Processed w∕Contour Tool
Material:
ALON
Rough Ground
MRF Material Removal (μm)
0 (As ground)
10.93±0.23
23.83±0.12
Areal
p-v (μm)
14.52±1.04
1.2±0.4
1.1±0.2
rms (μm)
1.45±0.02
0.09±0.01
0.07±0.02
Perpendicular (⊥)
p-v (μm)
8.12±0.49
0.40±0.04
0.30±0.06
rms (μm)
1.41±0.05
0.09±0.00
0.07±0.02
Parallel (∥)
p-v (μm)
8.12±0.49
0.39±0.05
0.23±0.10
rms (μm)
1.41±0.05
0.07±0.02
0.06±0.03
Medium Ground
MRF Material Removal (μm)
0 (As ground)
9.12±0.11
21.57±0.51
Areal
p-v (μm)
11.72±0.00
0.56±0.16
0.65±0.17
rms (μm)
0.72±0.02
0.09±0.02
0.12±0.03
Perpendicular (⊥)
p-v (μm)
4.84±0.42
0.39±0.09
0.47±0.11
rms (μm)
0.70±0.03
0.09±0.02
0.12±0.03
Parallel (∥)
p-v (μm)
4.84±0.42
0.23±0.06
0.18±0.03
rms (μm)
0.70±0.03
0.05±0.01
0.04±0.01
Fine Ground
MRF Material Removal (μm)
0 (As ground)
5.98±0.31
21.50±0.10
Areal
p-v (μm)
4.24±1.44
0.51±0.09
1.05±0.06
rms (μm)
0.10±0.05
0.08±0.01
0.16±0.04
Perpendicular (⊥)
p-v (μm)
0.67±0.50
0.33±0.03
0.72±0.16
rms (μm)
0.07±0.03
0.07±0.00
0.16±0.04
Parallel (∥)
p-v (μm)
0.67±0.50
0.22±0.04
0.19±0.09
rms (μm)
0.07±0.03
0.05±0.01
0.05±0.03
3(b)—CVD SiC Processed w∕Contour Tool
Material:
CVD SiC
Rough Ground
MRF Material Removal (μm)
0 (As ground)
1.70±0.060
9.41±0.012
Areal
p-v (μm)
3.680±0.228
0.193±0.042
0.126±0.013
rms (μm)
0.108±0.006
0.021±0.004
0.018±0.004
Perpendicular (⊥)
p-v (μm)
1.453±0.200
0.107±0.014
0.080±0.016
rms (μm)
0.10±0.005
0.020±0.004
0.017±0.004
Parallel (∥)
p-v (μm)
1.453±0.200
0.061±0.008
0.056±0.007
rms (μm)
0.10±0.005
0.013±0.002
0.012±0.001
Medium Ground
MRF Material Removal (μm)
0 (As ground)
1.61±0.020
8.64±0.03
Areal
p-v (μm)
3.464±0.177
0.169±0.041
0.140±0.025
rms (μm)
0.077±0.009
0.021±0.007
0.020±0.004
Perpendicular (⊥)
p-v (μm)
1.184±0.066
0.105±0.031
0.080±0.039
rms (μm)
0.070±0.004
0.020±0.007
0.030±0.021
Parallel (∥)
p-v (μm)
1.184±0.066
0.054±0.010
0.047±0.007
rms (μm)
0.070±0.004
0.011±0.002
0.010±0.002
Fine Ground
MRF Material Removal (μm)
0 (As ground)
1.86±0.090
10.23±0.120
Areal
p-v (μm)
0.424±0.069
0.141±0.054
0.136±0.025
rms (μm)
0.018±0.002
0.013±0.001
0.019±0.003
Perpendicular (⊥)
p-v (μm)
0.011±0.005
0.073±0.009
0.091±0.012
rms (μm)
0.018±0.001
0.012±0.001
0.019±0.003
Parallel (∥)
p-v (μm)
0.011±0.005
0.060±0.006
0.043±0.006
rms (μm)
0.018±0.001
0.012±0.001
0.009±0.002
(Continued)
Table 4
Table 3.(Continued)
(c)—PCA Processed w∕Ring Tool
Material:
PCA
Medium Ground
MRF Material Removal (μm)
0 (As ground)
8.84±0.07
15.9±0.06
Areal
p-v (μm)
8.942±1.067
0.247±0.031
0.276±0.045
rms (μm)
0.569±0.076
0.033±0.006
0.044±0.008
Perpendicular (⊥)
p-v (μm)
3.613±0.401
0.177±0.028
0.220±0.039
rms (μm)
0.460±0.082
0.033±0.006
0.043±0.008
Parallel (∥)
p-v (μm)
3.613±0.401
0.128±0.008
0.101±0.008
rms (μm)
0.460±0.082
0.030±0.002
0.022±0.002
Surface microroughness measurements were taken at five random locations within a spot ddp with the white-light interferometer. The amount of material removed by MRF (spot maximum depth) was extracted from the 3-D profilometer scans.
Tables (4)
Table 1
Physical and Mechanical Properties of Hard Ceramics Listed by Increasing Vickers Hardness and Fracture Toughnessa
Catalog values, unless otherwise specified.
Calculated using the Evans correlation [23].
Density may vary slight depending on the stoichiometry.
Averaging 10 Vickers indentations at 1 kgf.
Using Archimedes' water immersion principles [24].
Calculated from measurements using ultrasonic tests and density values. Data were averaged for two PCA discs (∼30 mm diameter × ∼1 mm thick) polished on both sides.
Averaging five Vickers indentations at 1 kgf.
The following parameters remained constant: Wheel speed, Ωt = 6800 rpm for contour tool grinding, and Ωt = 3000 rpm for ring tool grinding, work spindle speed, Ωw = 100 rpm in both cases.
Bronze bonded, 75 diamond concentration.
Resin bonded, 75 diamond concentration.
Table 3
Selected Summary of Results for Grinding and Spotting Experiments
(a)—ALON Processed w∕Contour Tool
Material:
ALON
Rough Ground
MRF Material Removal (μm)
0 (As ground)
10.93±0.23
23.83±0.12
Areal
p-v (μm)
14.52±1.04
1.2±0.4
1.1±0.2
rms (μm)
1.45±0.02
0.09±0.01
0.07±0.02
Perpendicular (⊥)
p-v (μm)
8.12±0.49
0.40±0.04
0.30±0.06
rms (μm)
1.41±0.05
0.09±0.00
0.07±0.02
Parallel (∥)
p-v (μm)
8.12±0.49
0.39±0.05
0.23±0.10
rms (μm)
1.41±0.05
0.07±0.02
0.06±0.03
Medium Ground
MRF Material Removal (μm)
0 (As ground)
9.12±0.11
21.57±0.51
Areal
p-v (μm)
11.72±0.00
0.56±0.16
0.65±0.17
rms (μm)
0.72±0.02
0.09±0.02
0.12±0.03
Perpendicular (⊥)
p-v (μm)
4.84±0.42
0.39±0.09
0.47±0.11
rms (μm)
0.70±0.03
0.09±0.02
0.12±0.03
Parallel (∥)
p-v (μm)
4.84±0.42
0.23±0.06
0.18±0.03
rms (μm)
0.70±0.03
0.05±0.01
0.04±0.01
Fine Ground
MRF Material Removal (μm)
0 (As ground)
5.98±0.31
21.50±0.10
Areal
p-v (μm)
4.24±1.44
0.51±0.09
1.05±0.06
rms (μm)
0.10±0.05
0.08±0.01
0.16±0.04
Perpendicular (⊥)
p-v (μm)
0.67±0.50
0.33±0.03
0.72±0.16
rms (μm)
0.07±0.03
0.07±0.00
0.16±0.04
Parallel (∥)
p-v (μm)
0.67±0.50
0.22±0.04
0.19±0.09
rms (μm)
0.07±0.03
0.05±0.01
0.05±0.03
3(b)—CVD SiC Processed w∕Contour Tool
Material:
CVD SiC
Rough Ground
MRF Material Removal (μm)
0 (As ground)
1.70±0.060
9.41±0.012
Areal
p-v (μm)
3.680±0.228
0.193±0.042
0.126±0.013
rms (μm)
0.108±0.006
0.021±0.004
0.018±0.004
Perpendicular (⊥)
p-v (μm)
1.453±0.200
0.107±0.014
0.080±0.016
rms (μm)
0.10±0.005
0.020±0.004
0.017±0.004
Parallel (∥)
p-v (μm)
1.453±0.200
0.061±0.008
0.056±0.007
rms (μm)
0.10±0.005
0.013±0.002
0.012±0.001
Medium Ground
MRF Material Removal (μm)
0 (As ground)
1.61±0.020
8.64±0.03
Areal
p-v (μm)
3.464±0.177
0.169±0.041
0.140±0.025
rms (μm)
0.077±0.009
0.021±0.007
0.020±0.004
Perpendicular (⊥)
p-v (μm)
1.184±0.066
0.105±0.031
0.080±0.039
rms (μm)
0.070±0.004
0.020±0.007
0.030±0.021
Parallel (∥)
p-v (μm)
1.184±0.066
0.054±0.010
0.047±0.007
rms (μm)
0.070±0.004
0.011±0.002
0.010±0.002
Fine Ground
MRF Material Removal (μm)
0 (As ground)
1.86±0.090
10.23±0.120
Areal
p-v (μm)
0.424±0.069
0.141±0.054
0.136±0.025
rms (μm)
0.018±0.002
0.013±0.001
0.019±0.003
Perpendicular (⊥)
p-v (μm)
0.011±0.005
0.073±0.009
0.091±0.012
rms (μm)
0.018±0.001
0.012±0.001
0.019±0.003
Parallel (∥)
p-v (μm)
0.011±0.005
0.060±0.006
0.043±0.006
rms (μm)
0.018±0.001
0.012±0.001
0.009±0.002
(Continued)
Table 4
Table 3.(Continued)
(c)—PCA Processed w∕Ring Tool
Material:
PCA
Medium Ground
MRF Material Removal (μm)
0 (As ground)
8.84±0.07
15.9±0.06
Areal
p-v (μm)
8.942±1.067
0.247±0.031
0.276±0.045
rms (μm)
0.569±0.076
0.033±0.006
0.044±0.008
Perpendicular (⊥)
p-v (μm)
3.613±0.401
0.177±0.028
0.220±0.039
rms (μm)
0.460±0.082
0.033±0.006
0.043±0.008
Parallel (∥)
p-v (μm)
3.613±0.401
0.128±0.008
0.101±0.008
rms (μm)
0.460±0.082
0.030±0.002
0.022±0.002
Surface microroughness measurements were taken at five random locations within a spot ddp with the white-light interferometer. The amount of material removed by MRF (spot maximum depth) was extracted from the 3-D profilometer scans.