Abstract
A Pb1−xSnxTe single-mode laser with a buried heterostructure has been developed by use of a two-step liquid-phase epitaxial growth. The active-layer size was calculated for fundamental transverse-mode operation. Tin diffusion was simulated in the active layer during the second growth step, and the results were used to select the optimum growth temperature. Analysis of the crystal-growth mechanism in the buried-heterostructure formation enabled us to develop a new growth method. The laser we developed showed single-mode operation with a wavelength of 8 μm and a power of 1.7 mW at 50 K. At 80 K, the threshold current for continuous-wave (cw) operation is 60 mA, which is nearly equal to the threshold current for pulsed operation. Maximum operating temperatures are 105 K for cw operation and 144 K for pulsed operation.
© 1993 Optical Society of America
Full Article | PDF ArticleMore Like This
D. Handelman, Amos Hardy, and Abraham Katzir
Appl. Opt. 26(1) 12-14 (1987)
Jens Buus
Appl. Opt. 20(10) 1884-1885 (1981)
Z. Feit, R. Woods, D. Kostyk, Richard Papez, Y. A. Mantz, M. Cummings, and A. W. Mantz
Appl. Opt. 32(6) 966-970 (1993)