Abstract
The frequency of a AlGaAs diode laser has been locked to the transition of UI at 826.20570 nm using the optogalvanic effect. A hollow cathode vapor generator has been utilized to produce a density of 1012 atoms/cm3 of uranium in vapor phase. The absolute frequency stability for a 10-min run was estimated to be better than 500 kHz P–P at an integration time of 1 s. This preliminary result shows that the rich optogalvanic spectrum of uranium can be efficiently used for the frequency-locking of semiconductor lasers.
© 1990 Optical Society of America
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