Abstract
Active slot waveguides were fabricated by embedding low-index Er/Yb silicate material in high-index silicon. A 1.7 dB signal enhancement at 1.53 µm in a 6 mm-long slot waveguide was observed through 1476 nm pumping. The peak Er emission cross-section is determined as and the excited Er ion fraction is 0.17. Our experiment shows that the defects in upper of Si-on-insulator (SOI) and deposited distorts photoluminescence spectrum and prevents further optical amplification. This negative effect can be partly corrected through annealing treatment, which allows better propagation of the pump light, therefore, stronger excitation in the sandwiched Er/Yb silicate. The defects also affect the 1.53 µm decay curve and are the dominant lifetime reduction mechanism in the active slot waveguide.
©2012 Optical Society of America
Full Article | PDF ArticleMore Like This
J. M. Ramírez, Y. Berencén, F. Ferrarese Lupi, D. Navarro-Urrios, A. Anopchenko, A. Tengattini, N. Prtljaga, L. Pavesi, P. Rivallin, J. M. Fedeli, and B. Garrido
Opt. Express 20(27) 28808-28818 (2012)
Luke B. Fletcher, Jon J. Witcher, Neil Troy, Richard K. Brow, and Denise M. Krol
Opt. Lett. 37(7) 1148-1150 (2012)
Xingjun Wang, Peiqi Zhou, Yandong He, and Zhiping Zhou
Opt. Mater. Express 8(10) 2970-2990 (2018)