Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga<sub>2</sub>S<sub>3</sub> nanocrystals

Jing Ren; Bo Li; Guang Yang; Weina Xu; Zhihuan Zhang; Mihail Secu; Vasile Bercu; Huidan Zeng; Guorong Chen

doi:10.1364/OL.37.005043

Optics Letters
Vol. 37,
Issue 24,
pp. 5043-5045
(2012)
•https://doi.org/10.1364/OL.37.005043

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals

Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, and Guorong Chen

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Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, and Guorong Chen, "Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals," Opt. Lett. 37, 5043-5045 (2012)

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- Lasers and Laser Optics
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About this Article
History
- Original Manuscript: August 22, 2012
- Revised Manuscript: October 9, 2012
- Manuscript Accepted: November 3, 2012
- Published: December 5, 2012

Abstract

Upon 808 nm excitation, an intense broadband near-infrared emission from ${Cr}^{4 +}$ has been observed in $80 {GeS}_{2} - 20 {Ga}_{2} S_{3}$ chalcogenide glass-ceramics (GCs) containing ${Ga}_{2} S_{3}$ nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000–1500 nm). The formation of ${Ga}_{2} S_{3}$ nanocrystals ( $\sim 20 nm$ ) increases the emission intensity of ${Cr}^{4 +}$ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

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Optics Letters