Abstract
We describe a technique for accurately measuring the ratio between the imaginary and real parts of the third-order nonlinearity in optical waveguides. Unlike most other methods, it does not depend on precise knowledge of the coupling efficiencies, optical propagation loss, or optical pulse shape. We apply the method to characterize a silicon waveguide, a GaAs waveguide, and AlGaAs waveguides with different alloy concentrations.
© 2012 Optical Society of America
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