Abstract
We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
© 2004 Optical Society of America
Full Article | PDF ArticleMore Like This
Richard L. Espinola, Jerry I. Dadap, Richard M. Osgood, Sharee J. McNab, and Yurii A. Vlasov
Opt. Express 12(16) 3713-3718 (2004)
Qianfan Xu, Vilson R. Almeida, and Michal Lipson
Opt. Lett. 30(1) 35-37 (2005)
D. Dimitropoulos, B. Houshmand, R. Claps, and B. Jalali
Opt. Lett. 28(20) 1954-1956 (2003)